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Electronic Chemicals

Ansan Headquarters Plant 1, Plant 2, and Jincheon Plant 3
have the experience and facilities to produce and deliver
electronic reagents in the display field
and currently produce more than 40 types of products.

1. Electronic Fine Chemicals

Product Name Molecular Formula Grade Usage/Introduction
Hydrogen Peroxide H2O2 EL Used as cleansing solution mixed with ammonium hydroxide and ultrapure water to remove
surface contaminants as well as to cleanse organic matters mixed with sulfuric acid.
Sulfuric acid H2SO2 EL Used as cleansing solution mixed with hydrogen peroxide to cleanse organic matters.
Ammonia water NH2OH EL Used as cleansing solution mixed with hydrogen peroxide and ultrapure water to remove surface contaminants.
IPA (CH3)2CHOH ELH Used to cleanse organic matters or remove water/moisture of the surface.
Also used as buffer solution preventing anti-corrosion for wiring.
Nitric acid HNO3 EL Used to cleanse the equipment. Also used as etching solution mixed with other kinds of acid.
Hydrochloric acid HCl EL Used as part of cleansing solution to remove metallic ion after RCA-processing.
Acetic acid CH3COOH EL Used as buffer solution to cleanse the surface or to enhance uniformity
of the cleansing process mixed with other kinds of acid.
Phosphoric acid H3PO2 EL Used as etching solution for silicon nitride or as part of other etching solution.
Hydrofluoric acid HF EL Used as etching solution for silicon oxide.
Acetone CH3COCH3 ELH Used to remove organic matters of the surface or cleanse the equipment.
Methanol CH3OH EL Used to remove organic matters of the surface or cleanse the equipment.
Ethanol C2H2OH EL Used to cleanse the equipment.
Etching solution - - Etching solution suitable for every process. Ingredients depend on user/process.

2. Electronic Material Process Chemicals

Our Line-up with Main field

Field for Items
LCD PR Stripper
Pod Stripper
Chemical Recycle Tech.
FED Molybdenum Etchant ( Mo / Dielectric )
Aluminum Etchant ( Al / Mo, Mo / Al / Mo )
PDP Simultaneous Dielectric Layer & Rib Barrier Remover
OLED & Display film ITO Etchant
Aluminum Etchant
Solar cell Ag Powder [ under 3μm & 500 nano ]
Ni Powder
Cu / Ag powder ( Ag electrode substitute )
Al Paste
Process Chemical ( IPA, HF, KOH, HCI, HNO3, etc. )
ETC. Methyl 3 - Methoxypropionate synthesized
Terrestrial magnetism sensor Etchant
Gold Etchant
Titanium Etchant
Buffered Oxide Etchant
PR ink remover
Glass cleaner
Volumetric Karl - Fischer Reagent
Dilution products
Various Single or Simultaneous Etchant

Product List

Wet - Etching Solution

Etching for Properties
Molybdenum
/ Dielectric
Molybdenum / Dielectric

  • Mo Etching

    - Thickness : 750 ~ 800 nm

    - Etch. Rate : 40 nm/sec

    - CD Loss : < 1μm (both)

    - No under cut

  • Dielectric Layer etching

    - Thickness : 17 ~ 18μm

    - Etch. Rate : 0.08 ~ 1.0 μm/sec
Aluminium
/ Molybdenum
Aluminium / Molybdenum

  • Al / Mo layer

    - Etch. time : 60 sec ( Just etch. : 50 sec )

    - Taper : under 60 degree

  • Mo layer

    - Etch. time : 27 sec ( Just etch. : 17 sec )

    - Taper : under 90 degree

    - Improved CD loss uniformity
    than other convention chemicals
Gold
/ Titanium
on PMMA
Gold / Titanium on PMMA

  • Au/ Etching

    - Thickness : 500 ~ 700 nm

    - Etch. Rate : 16 ~ 20 nm/sec

  • Ti etching

    - Thickness : 500 ~ 700 nm

    - Etch. Rate : 25 ~ 30 nm/sec
Indium
Tin Oxide
Indium Tin Oxide
ITEMS. 40℃ 45℃ 50℃ 60℃
FeCl3 BASE 780 1,140 2,100 -
HCl + HNO3 600 780 1,200 -
Oxalic type 12.5 18.8 25.0 50.0
675 780 1,335 -
( Unit : A / min )
Chromium
Chromium

  • Physicalproperties

    - Solubility in water : Complete

    - Appearance : Orange liquid

    - Odor : Chlorine Odor

    - Specific Gravity : 1.05 - 1.25

PR - Stripper / Cleaner

Treatment for Properties
Organic
Stripper
Organic Stripper

  • Photoresist ( Positive )

    - Posi.-PR model : ZPP - 1900U3

    - Soft baking : 110℃, 170 sec

    - Thickness of Photoresist : 1.5um

  • Strip. Condition

    - Temp. : 70℃

    - Strip. time : 2 min 40 sec
Glass
Cleaner
Glass Cleaner

  • Low Contact Angle

    - C.A : under 10 degree

  • Test Condition

    - Temp. : R.T

    - Ultra Sonicc Time : 90 sec

  • High Elimination Abillity

    - Organic Residues remove

    - No Residuess in Water

  • Applications Area

    - FPD Business Glass Cleaner ( TFT - LCD, OLED, FED, PDP )

    - Surface Cleaning
Rib barrier
& Dielectro
Layer Remover
Rib barrier & Dielectro Layer Remover

  • Chemical Condition

    Room temperature

    Normal pressure

    Non - dangerous

  • This Series could remove Pre-calciination
    Rib barrier & Dielectronic Layer. It could be
    recycled defective product of spread on glass.
    Especially, It does not give any damage to electo line on glass.
    Further more, glass cleaning effect can be obtained.
    * Patent No. 10-0864091
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